@article{Thadesar_2013,
	doi = {10.1088/0960-1317/23/3/035003},
	url = {https://doi.org/10.1088%2F0960-1317%2F23%2F3%2F035003},
	year = 2013,
	month = {jan},
	publisher = {{IOP} Publishing},
	volume = {23},
	number = {3},
	pages = {035003},
	author = {Paragkumar A Thadesar and Muhannad S Bakir},
	title = {Novel photodefined polymer-embedded vias for silicon interposers},
	journal = {Journal of Micromechanics and Microengineering},
	abstract = {This paper describes the fabrication and characterization of novel photodefined polymer-embedded vias for silicon interposers. The fabricated polymer-embedded vias can help obtain ∼3.8× reduction in via-to-via capacitance as well as a reduction in insertion loss compared to TSVs with a silicon dioxide liner. Polymer-embedded vias 100 μm in diameter, 270 μm tall and at 250 μm pitch were fabricated. Resistance and leakage measurements were performed for the fabricated polymer-embedded vias. The average value of the measured resistance for 20 polymer-embedded vias is 2.54 mΩ and the maximum measured via-to-via leakage current for 10 pairs of polymer-embedded vias is 80.8 pA for an applied voltage of 200 V.}
}